Power electronic devices

Supporting both commercial and open-source tools, we are designing and optimizing beyond state-of-the-art power electronic devices from core to termination structures. Typical device architectures are based on:

• metal-oxide-semiconductor field-effect transistor (MOSFET)

• high-electron-mobility transistor (HEMT)

• bipolar junction transistor (BJT)

• insulated-gate bipolar transistor (IGBT)

• power diodes (e.g., SBD, MPS)

Besides general functionality, we are tailoring designs for e.g. desired compromises between high breakdown voltage, low on-resistance and operation robustness.

We are using complex workflows to model semiconductor fabrication process, typically on feature scale, and subsequently explore device behavior on transistor-level up to circuit level simulations.

Process models include:

• Ion implantation

• Dopant diffusion and activation

• Oxidation

• Deposition

• Etching

Device simulations can include:

• Self-heating effects

• Circuit co-simulation

• Degradation effects 

In order to investigate the generation of atomic defects and their impact on device behavior and reliability, atomic-scale modelling capabilities are being developed in included in our modelling workflow.