Welcome to the Institute for Power Electronic Devices

The Institute for Power Electronics Devices conducts research in the field of active power semiconductor devices. Furthermore, intelligent devices for integrated fault prediction and neuromorphic electronics are being developed. The resulting devices and technologies are based on wide bandgap semiconductors or silicon. They address applications in fields like electromobility, renewable energies, autonomous industrial environments and data centres.

We have three main research areas:

1. Future technology generations and new device concepts - research on new concepts for developing and manufacturing power semiconductor devices in GaN, SiC and Si process environments as well as in particularly the development of novel device structures and their optimization using machine learning techniques.
2. Stability, reliability and robustness - novel methods and models for investigating and modelling the reliability of power semiconductor devices, static and dynamic switching reliability, improved degradation models, interaction between device and packaging technology, test procedures to assess reliability under extreme temperatures and highly dynamic conditions, integrated reliability.
3. New materials, processes and devices - new device functionalities, integration of novel ferroelectric like e.g. aluminium scandium nitride (AlScN), integration of high-k materials, neuromorphic power electronics.

The Institute for Power Electronic Devices is newly founded at the Hamburg University of Technology (TU Hamburg) and is currently being established. If you are interested in getting to know us better, please do not hesitate to contact us.