The Institute for Power Electronic Devices conducts research in the field of active power semiconductor devices as well as intelligent devices for integrated failure prediction and neuromorphic electronics. We research devices and technologies based on gallium nitride, silicon carbide, aluminum scandium nitride and silicon for applications in electromobility, renewable energies and autonomous industrial environments.
We have 3 main research areas:
Future technology generations and new device concepts (research on new concepts for developing and manufacturing power semiconductor devices in GaN, SiC and Si, lateral and vertical GaN, novel device strutures incorporating machine learning (ML) techniques)
Stability, reliability and robustness (novel methods and models for investigating and modeling the reliability of power semiconductor devices in Si and wide bandgap, static and dynamic switching reliability, improved degradation models, interaction between device and packaging technology, test procedures to assess reliability under extreme temperatures and highly dynamic conditions, integrated reliability)
New materials and devices (new device fuctionalities, FeFETs based on aluminum scandium nitride (AlScN), integration of high-k materials, neuromorphic electronics)
The Institute for Power Electronic Devices is newly founded at the TU Hamburg and is currently being established. If you are interested in our research, please do not hesitate to contact us.
Please also contact us if you are interested in student projects.
