Incorporation of free-carrier diffusion into the modeling and design of a silicon strip-waveguide Raman laser

Incorporation of free-carrier diffusion into the m

M. Krause, H. Renner, E. Brinkmeyer,
Incorporation of free-carrier diffusion into the modeling and design of a silicon strip-waveguide Raman laser
VDE-ITG-Fachausschuss 9.1 - Diskussionssitzung: Messung und Modellierung in der Optischen Nachrichtentechnik, MMONT 2005 - 1.-3. Juni, Elsa-Brändström-Haus, Hamburg-Blankenese (Paper Do 4), p. 12 (2005)

Abstract: The effective lifetime of charge carriers generated by two-photon absorption in silicon strip waveguides is calculated accurately by taking into account the exact waveguide-mode field and a solution of the ambipolar carrier-diffusion equation. The results are used to design an optimal waveguide-width taper for an efficient continuous-wave silicon Raman laser. The waveguide width is broader at the pumped end of the laser where large amounts of power are guided. This scheme reduces the impact of free-carrier absorption and makes the laser significantly more efficient than one with a non-varying waveguide cross section (see Krause et al., CLEO 2005).

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