Analysis of Raman lasing characteristics in silicon-on-insulator waveguides

Analysis of Raman lasing characteristics in silico

M. Krause, H. Renner, E. Brinkmeyer,
Analysis of Raman lasing characteristics in silicon-on-insulator waveguides
Opt. Express 12(23), pp. 5703-5710 (2004)

Abstract: Numerical analysis predicts that continuous-wave Raman lasing is possible in silicon-on-insulator (SOI) waveguides, in spite of the detrimental presence of two-photon absorption and free-carrier absorption. We discuss in particular the dependence of the lasing characteristics of SOI Raman lasers on the effective lifetime of the free carriers generated by two-photon absorption. It is shown that the pump-power-dependent cavity losses lead to a rollover of the output-power characteristics at a certain pump-power level and that there exists an upper shutdown threshold at which the laser operation breaks down.

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